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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1063
DESCRIPTION *With TO-3 package *Low collector saturation voltage *High transition frequency APPLICATIONS *Designed for general purpose switching and amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -6 -10 80 150 -65~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SA1063
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ;IB=0
-150
V
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
B
-2.0
V
VBE
Base-emitter on voltage
IC=-4A;VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-50
A
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
A
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
280
hFE-2
DC current gain
IC=-4A ; VCE=-5V
20
fT
Transition frequency
IC=-0.5A ; VCE=-5V
50
MHz
hFE-1 Classifications R 40-80 Q 60-120 P 90-180 O 140-280
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1063
Fig.2 outline dimensions (unindicated tolerance:0.1mm)
3


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